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Typical Characteristics
1000
100
10us
500
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1 ]
100us
10
SINGLE PULSE
T J = MAX RATED
10
STARTING T J = 25 o C
1
T C = 25 o C
OPERATION IN THIS
AREA MAY BE
1ms
10ms
STARTING T J = 150 o C
0.1
1
LIMITED BY r DS(on)
10
DC
100
1
0.01
0.1
1
10
100
400
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
C apability
T J = 175 C
140
120
100
80
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 5V
o
140
120
100
80
V GS = 10V
V GS = 5V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 4.5V
60
60
40
20
0
2.0
2.5
T J = 25 o C
3.0 3.5
4.0
T J = -55 o C
4.5 5.0
5.5
6.0
40
20
0
0
V GS = 4V
V GS = 3.5V
1 2 3
4
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
20
16
I D = 70A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
T J = 175 o C
2.0
1.8
1.6
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.4
12
1.2
1.0
8
T J = 25 o C
0.8
I D = 70A
V GS = 10V
4
5 6 7 8 9
V GS , GATE TO SOURCE VOLTAGE ( V )
10
0.6
-80
-40 0 40 80 120 160
T J , JUNCTION TEMPERATURE ( o C )
200
Figure 9. On-Resistance vs Gate to Source
Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDB8445 Re v A 1 (W)
5
www.fairchildsemi.com
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